Igwe eji ekpo ọkụ nke Silicon Carbide (SiC) dabere na ya maka gburugburu ebe okpomọkụ dị elu na Plasma
A na-eji ígwè silikọn carbide dị ọcha (batch S1111, SiC 99.72%, Si 0.05%) emepụta chuck seramiiki nke St.Cera's SiC. Ọ na-enye ike mgbanwe nke 449 MPa, ike mgbawa nke 3.12 MPa·m¹/², na modulus na-agbanwe agbanwe nke 457 GPa. Nhazi okpomọkụ nkịtị nke ihe ahụ (120–150 W/m·K) na obere mgbasawanye okpomọkụ (4.0–4.5×10⁻⁶/℃) na-eme ka mmụba okpomọkụ ngwa ngwa na obere wafer warpage n'oge okirikiri okpomọkụ. Enwere ike ịhazi chuck ahụ dị ka chuck vacuum porous (usoro gas na-efe efe) ma ọ bụ chuck ọkọlọtọ a gwuru gbubiri. Site na okpomọkụ kachasị eji nke 1600–1700°C (enweghị ibu) na iguzogide mbuze plasma pụrụ iche, chuck a dị mma maka nhazi wafer dị elu (annealing, RTP) na ụlọ etch siri ike ebe chuck alumina na-emebi.
Nkọwapụta(dabere na akụkọ nnwale SiC S1111 enyere na ụkpụrụ nkịtị):
| Akụ na ụba | Uru |
| ihe | SiC (99.72% SiC, 0.05% SiE efu) |
| Njupụta | 3.10–3.15 g/cm³ |
| Mmịpụta Mmiri | 0% |
| Ike nke Flexural | 449 MPa |
| Ike Mgbaji | 3.12 MPa·m¹/² |
| Modulu Elastic | 457 GPA |
| Ike Vickers | 25–28 GPA |
| Ọgbakọ okpomọkụ | 120–150 W/m·K |
| CTE (25–1000°C) | 4.0–4.5×10⁻⁶/℃ |
| Oke Ojiji Okpomọkụ (enweghị ibu) | 1600–1700°C |
| Ịdị larịị (karịa 300mm) | ≤5 μm |
| Mmecha Elu | Ra ≤0.4 μm (a gbanyere ya n'ala) |
Ngwa:
● Ịkpọchi okpomọkụ dị elu (ịkpọchi ihe, RTP, uto epitaxial)
● Plasma etch chuck nwere nnukwu iguzogide fluorine
● Njikwa wafer dị gịrịgịrị nke nwere otu okpomọkụ/oyi
● Ọkpọkọ oghere maka nkwado wafer na-anaghị akpọtụrụ
Mmepụta:
Ịkpụcha SiC → Ịkpụcha nha nke ọma nke ịdị larịị na profaịlụ elu → Nhazi nhazi oghere nhọrọ (maka ikpo oghere) → Ịkpọchi → nhicha ultrasonic. A na-enyocha chuck ọ bụla 100% maka ịdị larịị (interferometer laser) na ịdị larịị nke vacuum (nnwale mmiri).
Njikwa Ogo:
● Nlele nha CMM (dayameta, ọkpụrụkpụ, ọnọdụ oghere)
● Nha nha dị larịị dịka ASTM si dị
● Nnwale ntapu helium (maka ihe mkpuchi ikuku)
● Nnwale ike nke na-agbanwe agbanwe kwa otu (akụkọ nnwale ntụle)
Uru karịa Alumina Chucks:
● Ọkwa okpomọkụ dị elu (120–150 vs 32 W/m·K maka alumina) – Mbufe okpomọkụ ngwa ngwa 4×
● CTE dị ala (4.0 vs 7.2×10⁻⁶/℃) – na-ebelata nrụgide okpomọkụ wafer
● Nguzogide plasma dị elu - ndụ 10 × ogologo oge na fluorine etch
● Okpomọkụ kachasị elu maka ojiji (1600°C vs 800°C maka alumina)
Nhazi:
● Elu oghere ma ọ bụ nke nwere oghere
● Dayameta 100–450 mm, gburugburu ma ọ bụ akụkụ anọ
● Mgbaaka mkpuchi ọnụ ma ọ bụ nkebi oghere mpaghara
● Nhọrọ nkwado ígwè maka itinye ihe siri ike
Data igwe niile dị n'elu sitere na akụkọ nnwale enyere (ogbe S1111). Ụkpụrụ okpomọkụ na ike siri ike bụ ihe a na-ahụkarị maka ọkwa SiC a. Porous SiC chucks chọrọ nhazi ọzọ; biko jụọ maka oghere na nha oghere kpọmkwem.
