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Ihe na-eme ka ihe na-eme ka seramiiki nke Silicon Carbide (SiC) sie ike - Ike siri ike maka njikwa Wafer dị elu

Ihe na-eme ka ihe na-eme ka seramiiki nke Silicon Carbide (SiC) sie ike - Ike siri ike maka njikwa Wafer dị elu

Nkọwa Dị Mkpirikpi:

A na-eji ihe S1111 mee ihe na seramiiki nke St.Cera's Sera's seramiiki effector site na iji ihe dị elu nke silicon carbide (ọdịnaya SiC bụ 99.72%, Si 0.05%). Ọ na-enye ihe pụrụ iche nke igwe: ike flexural 449 MPa (a tụrụ), modulus elastic 457 GPa (a tụrụ), na ike Vickers 25–28 GPa (a tụrụ). Njupụta dị ala (3.10–3.15 g/cm³, a na-ahụkarị) na-enye ike pụrụ iche, nke dị mma maka robot ndị na-ebufe wafer dị elu. Site na ike okpomọkụ nke 120–150 W/m·K (a tụrụ) na oke mgbasawanye okpomọkụ nke 4.0–4.5×10⁻⁶/℃ (a tụrụ), ihe na-eme njedebe a na-ewepụ okpomọkụ nke ọma ma na-eme ka nha nha kwụsie ike n'oge njikwa okpomọkụ dị elu (ruo 1600–1700°C, enweghị ibu). Agba ojii/isi awọ na enweghị mmiri na-eme ka ụlọ dị ọcha dakọtara.


Nkọwa Ngwaahịa

Akara Ngwaahịa

A na-eji ihe S1111 mee ihe na seramiiki nke St.Cera's Sera's seramiiki effector site na iji ihe dị elu nke silicon carbide (ọdịnaya SiC bụ 99.72%, Si 0.05%). Ọ na-enye ihe pụrụ iche nke igwe: ike flexural 449 MPa (a tụrụ), modulus elastic 457 GPa (a tụrụ), na ike Vickers 25–28 GPa (a tụrụ). Njupụta dị ala (3.10–3.15 g/cm³, a na-ahụkarị) na-enye ike pụrụ iche, nke dị mma maka robot ndị na-ebufe wafer dị elu. Site na ike okpomọkụ nke 120–150 W/m·K (a tụrụ) na oke mgbasawanye okpomọkụ nke 4.0–4.5×10⁻⁶/℃ (a tụrụ), ihe na-eme njedebe a na-ewepụ okpomọkụ nke ọma ma na-eme ka nha nha kwụsie ike n'oge njikwa okpomọkụ dị elu (ruo 1600–1700°C, enweghị ibu). Agba ojii/isi awọ na enweghị mmiri na-eme ka ụlọ dị ọcha dakọtara.

 

Nkọwapụta(dabere na akụkọ nnwale SiC S1111 enyere na ụkpụrụ nkịtị):

Akụ na ụba Uru
ihe SiC (99.72% SiC, 0.05% SiE efu)
Agba Ojii/Atụ ntụ
Njupụta 3.10–3.15 g/cm³
Mmịpụta Mmiri 0%
Ike nke Flexural 449 MPa (nkezi)
Ike Mgbaji 3.12 MPa·m¹/² (nkezi)
Modulu Elastic 457 GPA
Ike Vickers 25–28 GPA
Ọgbakọ okpomọkụ (25°C) 120–150 W/m·K
CTE (25–1000°C) 4.0–4.5×10⁻⁶/℃
Oke Ojiji Okpomọkụ (enweghị ibu) 1600–1700°C

 

Ngwa:

● Njikwa wafer okpomọkụ dị elu (mgbe afọ gasịrị, RTP, epitaxy)

● Ụlọ e ji ekpuchi plasma nke chọrọ nnukwu iguzogide mbuze

● Rọbọt ndị na-ebufe ngwa ngwa (dị mfe, siri ike dị elu)

 

Mmepụta:

Ntụ ntụ SiC → Ntụcha CNC nke profaịlụ aka na atụmatụ nrụnye → Ntụcha elu → Nhicha ultrasonic. Nnyocha nha 100% na nnwale ntapu helium maka ngwa ikuku.

 

Njikwa Ogo:

● Nnyocha CMM nke ogologo, obosara, na larịị

● Nnwale ike nke na-agbanwe agbanwe kwa otu (ọkwa akụkọ ule ọ bụla)

● Nnyocha anya n'okpuru microscope maka ntụpọ elu

 

Uru karịa alumina ma ọ bụ ígwè:

● modulus elastic dị elu nke 2× (457 vs ~380 GPa maka alumina) – obere mgbanwe

● Ike okpomọkụ dị elu nke 3× - mwepụ okpomọkụ ngwa ngwa

● Na-eguzogide >1600°C vs alumina's 800°C n'ikuku

● Njupụta dị ala karịa ígwè - mbelata ibu 40%

 

Nhazi:

Ogologo ya bụ 150–450 mm, ọdịdị nsọtụ (njide ọnụ, Bernoulli, dị larịị), ụkpụrụ flange dị iche iche dịka eserese OEM si dị.

*Data igwe niile dị n'elu sitere na akụkọ nnwale enyere (ogbe S1111). Ụkpụrụ okpomọkụ na ike siri ike bụ ihe a na-ahụkarị maka ọkwa SiC a; biko kpọtụrụ anyị maka asambodo akọwapụtara nke ọma.*


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